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CD2315 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment.

Ø.125 NOM.

Key Features

  • PG = 18 dB min. at 75 W/30 MHz.
  • IMD3 = -30 dBc max. at 75 W (PEP).
  • Omnigold™ Metalization System DIM F 3 G H I.

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Datasheet Details

Part number CD2315
Manufacturer Advanced Semiconductor
File Size 15.33 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet CD2315 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CD2315 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG B .112 x 45° A 2 1 2 C D E Ø.125 NOM. FULL R J .125 FEATURES: • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System DIM F 3 G H I MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.05 °C/W A B C D E F G H I J .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.