FH1100
FH1100 is SILICON DIODE manufactured by Advanced Semiconductor.
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SILICON DIODE
DESCRIPTION:
The ASI FH1100 is a Silicon Diffused Hot Carrier Diode.
PACKAGE STYLE DO-7
Features
INCLUDE:
- QS = 1.6 p C Typ.
- C = 1.0 p F Max. @ f = 890 MHz
- Hermetic Glass Package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG Tsoldering 10 m A 5.0 V 100 m W @ TC = 25 °C -65 °C to +125 °C -65 °C to +150 °C +260 °C for 5 Seconds
CHARACTERISTICS
SYMBOL
VF IR VBR CT0 NF QS IF = 10 m A IF = 10 m A VR = 1.0 V
TC = 25 °C
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
550 1.0
UNITS m V µA V
IR = 100 µA VR = 0 V f = 1.0 MHz f = 890 MHz
5.0 1.0 10 1.6 p F d B p C
A D V A N C E D S E M I C O N D U C T O R, I N C
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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