Part FMB175
Description NPN SILICON RF POWER TRANSISTOR
Category Transistor
Manufacturer Advanced Semiconductor
Size 17.91 KB
Advanced Semiconductor
FMB175

Overview

The ASI FMB175 is Designed for PACKAGE STYLE .500 6L FLG FEATURES: * Omnigold™ Metalization System C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC 20 A 65 V 36 V 65 V 4.0 V 270 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 0.7 C/W O O O O DIM A B C E F G H I J K L M N G H MINIMUM inches / mm J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.33 .510 / 12.95 .007 / 0.18 .980 / 24.89 .105 / 2.67 .170 / 4.32 .285 / 7.24 .120 / 3.05 .135 / 3.43 ORDER CODE: ASI10589 O CHARACTERISTICS SYMBOL BVCBO BVCES BVCEO BVEBO ICES hFE COB PG ηC TC = 25 C NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 175 W IC = 5.0 A f = 1.0 MHz f = 108 MHz MINIMUM TYPICAL MAXIMUM 65 65 35 4.0 15 20 200 200 10 65 UNITS V V V V mA --pF dB % A V A N C E S E M I C O N U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. 1/1.

  • Omnigold™ Metalization System
  • C A 2x ØN FULL R B E .725/18,42 F K M L MAXIMUM inches / mm