Datasheet4U Logo Datasheet4U.com

HF20-12F - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band.

📥 Download Datasheet

Datasheet preview – HF20-12F

Datasheet Details

Part number HF20-12F
Manufacturer Advanced Semiconductor
File Size 19.19 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet HF20-12F Datasheet
Additional preview pages of the HF20-12F datasheet.

📁 Similar Datasheet

  • HF20A060ACE - Hexfred Die (International Rectifier)
  • HF2100 - MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF2110 - (HF2110 / HF2120) MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF2120 - (HF2110 / HF2120) MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF2150 - (HF2150 / HF2151) MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF2151 - (HF2150 / HF2151) MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF2160 - MINIATURE HIGH POWER RELAY (Hongfa Technology)
  • HF21FF - SUBMINIATURE HIGH OPWER RELAY (Hongfa Technology)
  • HF25F - SUBMINIATURE HIGH OPWER RELAY (Hongfa Technology)
  • HF26F - SUBMINIATURE HIGH POWER RELAY (Hongfa Technology)
Other Datasheets by Advanced Semiconductor
  • HF20-12S - NPN SILICON RF POWER TRANSISTOR
  • HF220-28 - NPN SILICON RF POWER TRANSISTOR
  • HF220-50 - NPN SILICON RF POWER TRANSISTOR
  • HF220-50F - NPN RF POWER TRANSISTOR
  • HF250-50 - NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
HF20-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF20-12F is Designed for 12.5 V Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF433 & SD1285 • PG = 18 dB Typical at 30MHz & 20W • Withstands 20:1 Load VSWR MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 2.2 C/W O PACKAGE STYLE .380" 4L FLANGE 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CBO BV CES BV CEO BV EBO ICES hFE COB GPE IMD3 ηC IC = 50 mA IC = 50 mA IC = 50 mA IE = 5.0 mA VCE = 15 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 36 18 4.0 5 UNITS V V V V mA VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V IC = 1.0 A f = 1.
Published: |