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HF5-12F Datasheet PDF

Advanced Semiconductor HF5-12F

HF5-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 20 dB min.
Part No. HF5-12F
Datasheet HF5-12F Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
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HF5-12F datasheet page 1 preview

DESCRIPTION

: The ASI at 5 W/30 MHz
● IMD3 = -30 dBc max. at 5.0 W (PEP)
● Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125

MAXIMUM RATINGS

IC VCBO VCEO VEBO PDISS TJ T STG θ JC O O G H I 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 OC/W O O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10590 CHARACTERISTICS SYMBOL BV CBO BV CEO BV CES BV EBO ICES hFE Cob GP IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 5.0 mA VCE = 15 V VCE = 5.0 V TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 36 18 36 4.0 5.0 UNITS V V V V mA --pF dB IC = 1.0 A f = 1.0 MHz f = 30 MHz 10 100 15 18 200 VCB = 12.5 V VCC = 12.5 V ICQ = 25 mA POUT = 5.0 Watts (PEP) -30 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.