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HF50-12 - NPN SILICON RF POWER TRANSISTOR

General Description

The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band.

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Datasheet Details

Part number HF50-12
Manufacturer Advanced Semiconductor
File Size 18.94 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet HF50-12 Datasheet

Full PDF Text Transcription for HF50-12 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HF50-12. For precise diagrams, and layout, please refer to the original PDF.

HF50-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz ...

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and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band. FEATURES INCLUDE: • High Gain, 16 dB Typical @ 30 MHz • Emitter Ballasting • Withstands Severe Mismatch MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ T STG θ JC 10 A 36 V 18 V 4.0 V 175 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.0 C/W O PACKAGE STYLE .380" 4L FLANGE 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CES BV CEO BV EBO ICES hFE Cob GPE η IMD TC = 25 OC TEST CONDITIONS IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V ICQ = 50 mA IC = 5.0 A f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 36 1

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