Advanced Semiconductor HF75-50F
HF75-50F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A FEATURES: • PG = 14 dB min.| Part No. | HF75-50F |
|---|---|
| Datasheet | HF75-50F Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI at 75 W/30 MHz● IMD3 = 50 dBc max. at 75 W (PEP)
● Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC O G H I 3.25 A 110 V 55 V 4.0 V 127 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 2.0 OC/W O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10610 CHARACTERISTICS SYMBOL BV CES BV CE0 BV EBO IC = 100 mA IC = 200 mA IE = 10 mA TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 110 55 4.0 UNITS V V V hFE Cob GP IMD3 ηC VCE = 6.0 V VCB = 50 V IC = 1.4 A f = 1.0 MHz 19 --- 50 100 --pF dB dBc % VCE = 50 V POUT = 75 W(PEP) 14 --37 --- -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.