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LT1001A
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
B ØA 45° C
DESCRIPTION:
E
ØD
The ASILT1001A is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications.
F
G
H
MAXIMUM RATINGS
IC VCE PDISS TJ TSTG θJC 200 mA 20 V 2.5 W @ TC = 50 C -65 °C to +200 °C -65 °C to +200 °C 70 °C/W
O
DIM A B C D E F G H .016 / 0.407 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .020 / 0.508 MINIMUM
inches / mm
MAXIMUM
inches / mm
.200 / 5.080 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600
1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE)
NONE
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO ICBO hFE VCE(SAT) ft Ccb NF GUmax
TA = 25 °C
TEST CONDITIONS
IC = 5.0 mA IC = 1.0 mA IE = 100 µA VCB = 10 V VCE = 5.
LT1001A Datasheet