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LT3014
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI LT3014 is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applications up to 1.0 GHz.
FEATURES INCLUDE:
• Gold Metalization • Emitter Ballasting • High Gain
PACKAGE STYLE .280 4L STUD
MAXIMUM RATINGS
IC VCB PDISS TJ T STG θ JC 300 mA 45 V 5.0 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 33.0 OC/W
1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BV CEO BV CES BV EBO hFE PG P1dB IP3 Cob ft IC = 10 mA VBE = 0 V IE = 1.0 mA VCE = 5.0 V VCE = 20 V VCE = 20 V VCE = 20 V VCB = 28 V VCE = 20 V
TC = 25 OC
NONE
TEST CONDITIONS
IC = 10 mA
MINIMUM TYPICAL MAXIMUM
22 50 3.5
UNITS
V V V
IC = 100 mA ICQ = 150 mA ICQ = 150 mA f = 1.0 GHz f = 1.0 GHz
20 3.0 27 3.
LT3014 Datasheet
