Advanced Semiconductor MA40160
The ASI MA40160 s a Silicon medium barrier Schottky Diode Designed for normal L.O.DESCRIPTION
: drive, MixerAPPLICATIONS
up to 26 GHz. PACKAGE STYLE 19FEATURES
:● Ceramic Package
MAXIMUM RATINGS
IF VR PDISS TJ TSTG 2.0 mA 3.0 V 75 mW @ TC = 25 °C -65 °C to +150 °C -65 °C to +150 ° C CHARACTERISTICS SYMBOL VF VBR CJ0 NF ZIF SRW IF = 2.0 mA IR = 3.0 µA VR = 0 V F = 16 Ghz TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 200 3.0 f = 1 MHz 0.06 0.10 6.5 450 0.2 500 UNITS mV V pF dB Ohms --- PLO = 10 dBm RL = 22 Ω FIF = 30 KHz RL = 22 Ω 250 NIF = 1.5 dB Peak power = 1 mW A D V A N C E D S E M I C O N D U C T O R, I N C 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/2