MLN2037F - NPN SILICON RF POWER TRANSISTOR

Description

The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz.

Features

Class A Operation.
PG = 5.0 dB at 5.0 W/2.0 GHz.
Omnigold™ Metalization System.
Common Emitter DIM B G L H J F I K M NP.

Advanced Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	MLN2037F
Manufacturer	Advanced Semiconductor
File Size	74.76 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	MLN2037F Datasheet
Additional preview pages of the MLN2037F datasheet.

📁 Similar Datasheet

MLN2030F - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN2030SS - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN2033F - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN2027F - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN2027SS - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN - Multiline Transient Voltage Surge Suppressor (Littelfuse)
MLN1027F - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN1027S - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN1027SL - NPN SILICON RF POWER TRANSISTOR (Advanced)
MLN1027SS - NPN SILICON RF POWER TRANSISTOR (Advanced)

Other Datasheets by Advanced Semiconductor

Full PDF Text Transcription

Click to expand full text

www.DataSheet.co.kr MLN2037F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN2037F is Designed for Class A Linear Applications up to 2.0 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES: • Class A Operation • PG = 5.0 dB at 5.0 W/2.0 GHz • Omnigold™ Metalization System • Common Emitter DIM B G L H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC 10 A 60 V 35 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 5.5 °C/W A B C D E F G H I J K L M N P .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .

Published: Jan 7, 2012 |