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MRF237 - Silicon NPN RF Power Transistor

General Description

The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 22 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM CHARACTERISTI

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Datasheet Details

Part number MRF237
Manufacturer Advanced Semiconductor
File Size 23.70 KB
Description Silicon NPN RF Power Transistor
Datasheet download datasheet MRF237 Datasheet

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MRF237 SILICON NPN RF POWER TRANSISTOR DESCRIPTION: The MRF237 is designed for large signal power amplifier applications operating to 225 MHz PACKAGE STYLE TO-39 MAXIMUM RATINGS IC VCBO VCEO PDISS TJ TSTG θJC 1.0 A 36 V 18 V 8.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 22 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR TRANS1.SYM CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB GPE η IC = 10 mA TC = 25 °C TEST CONDITIONS IC = 5.0 mA IC = 1.0 mA VCE = 15 V VCE = 5.0 V VCB = 15 V VCC = 12.5 V POUT = 4.0 W IC = 250 mA f = 1.0 MHz f = 175 MHz MINIMUM 18 36 4.0 TYPICAL MAXIMUM UNITS V V V .25 5.0 15 12 50 14 62 20 mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.