MRF326 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI MRF326 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment.

Key Features

Internal Input Matching Network.
PG = 8.5 dB at 40 W/400 MHz.
Omnigold™ Metalization System.

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MRF326 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	MRF326
Manufacturer	Advanced Semiconductor
File Size	34.88 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	MRF326 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF326 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF326 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: • Internal Input Matching Network • PG = 8.5 dB at 40 W/400 MHz • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG C A 2x ØN FU LL R D B E .725/18,42 F K M L M AX IM U M inche s / m m MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC 8.0 A 60 V 30 V 60 V 4.0 V 140 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 1.25 °C/W D IM A B C D E F G H I J K L M N G H M IN IM U M inche s / m m J I .150 / 3.43 .045 / 1.14 .210 / 5.33 .835 / 21.21 .200 / 5.08 .490 / 12.45 .003 / 0.08 .125 / 3.18 .725 / 18.42 .970 / 24.64 .090 / 2.29 .150 / 3.81 .120 / 3.05 .160 / 4.06 .220 / 5.59 .865 / 21.97 .210 / 5.