MRF329
MRF329 is manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF329 is Designed for Wide Band Large-Signal Output and Driver Amplifier Stages in the 100-500 MHz Frequency Range.
PACKAGE STYLE .400X.425" 6L FLG.
Features
INCLUDE:
- Gold Metalization
- 3:1 VSWR
- I/O Network Matching
MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
9.0 A (CONT) 12.0 A (PEAK) 60 V 270 W @ TC = 25 C -65 C to +150 C -65 C to +150 C 0.65 C/W
1 & 3 = EMITTER 2 = COLLECTOR 4 = BASE
CHARACTERISTICS
SYMBOL
BVCBO BVCES BVCEO BVEBO ICBO hFE Cob GPE η ψ IC = 80 mA IC = 80 mA IC = 80 mA IE = 8.0 mA VCB = 30 V VCE = 5.0 V VCB = 28 V VCC = 28 V VCC = 28 V VSWR = 3:1
TC = 25 C
TEST CONDITIONS
MINIMUM...
