MRF630 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz.

Key Features

Grounded Emitter.
PG = 9.5 dB at 3.0 W/470 MHz.
Omnigold™ Metalization System DIM.

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MRF630 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	MRF630
Manufacturer	Advanced Semiconductor
File Size	33.52 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	MRF630 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF630 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz. PACKAGE STYLE TO 205AD MILLIMETERS MIN MAX INCHES MIN MAX FEATURES: • Grounded Emitter • PG = 9.5 dB at 3.0 W/470 MHz • Omnigold™ Metalization System DIM MAXIMUM RATINGS IC VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 16 V 36 V 4.0 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50 4.20 4.57 0.44 0.53 0.44 0.88 0.41 0.48 5.08 BSC 0.72 0.86 0.74 0.01 12.70 19.05 6.35 -45° BSC -1.27 2.54 -- 0.355 0.366 0.315 0.335 0.165 0.180 0.017 0.021 0.017 0.035 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.040 0.500 0.750 0.25 -45 °BSC -0.050 0.