Datasheet4U.com

MRF630 Datasheet PDF

Advanced Semiconductor MRF630

MRF630 is Designed for UHF large signal, FM Land Mobile Applications up to 512 MHz.
Part No. MRF630
Datasheet MRF630 Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Buy Stock & Price
MRF630 datasheet page 1 preview

DESCRIPTION

: The ASI PACKAGE STYLE TO 205AD MILLIMETERS MIN MAX INCHES MIN MAX

FEATURES

:
● Grounded Emitter
● PG = 9.5 dB at 3.0 W/470 MHz
● Omnigold™ Metalization System DIM

MAXIMUM RATINGS

IC VCEO VCES VEBO PDISS TJ TSTG θJC 1.0 A 16 V 36 V 4.0 V 8.75 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 20 °C/W A B C D E F G H J K L M P R 9.02 9.29 8.01 8.50 4.20 4.57 0.44 0.53 0.44 0.88 0.41 0.48 5.08 BSC 0.72 0.86 0.74 0.01 12.70 19.05 6.35 -45° BSC -1.27 2.54 -- 0.355 0.366 0.315 0.335 0.165 0.180 0.017 0.021 0.017 0.035 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.040 0.500 0.750 0.25 -45 °BSC -0.050 0.10 -- 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE COB PG ηC IC = 50 mA IC = 50 mA IE = 1.0 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA --- VCE = 12.5 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V POUT = 3.0 W IC = 100 mA f = 1.0 MHz f = 470 MHz 9.5 20 8.0 10.8 55 12 pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C.