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MRF837
NPN SILICON RF LOW POWER TRANSISTOR
DESCRIPTION:
The ASI MRF837 is Designed primerily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges.
PACKAGE STYLE MACRO-X
MILLIMETERS DIM MIN A C D F G 4.44 1.90 0.84 0.20 0.76 7.24 10.54 --MAX 5.21 2.54 0.99 0.30 0.14 8.13 11.43 1.65
INCHES MIN 0.175 0.075 0.033 0.008 0.030 0.285 0.415 --MAX 0.205 0.100 0.039 0.012 0.045 0.320 0.450 0.065
FEATURES INCLUDE:
• Min gain 8.0 dB @ 750 mW/870 MHz • Silicon Nitride passivated • Low cost Plastic Package
K L N
IC VCBO PDISS TJ TSTG θJC
200 mA 36 V 1.0 W @ TC = 25 °C -65 °Cto +150 °C -65 °Cto +150 °C 40 °C/W
1 = COLLECTOR 2 =EMITER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCES BVCEO IC = 5.0 mA IC = 5.
MRF837 Datasheet
