MSC3003 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz.

Key Features

PG = 6.0 dB min. at 3 W / 3,000 MHz.
Difused Ballast Resistor.
Omnigold™ Metalization System DIM A L G H J F I K M NP.

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MSC3003 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	MSC3003
Manufacturer	Advanced Semiconductor
File Size	33.65 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	MSC3003 Datasheet

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MSC3003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC3003 is a common base transistor capable of providing 3.0 W Class-C RF output power @ 3.0 GHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES: • PG = 6.0 dB min. at 3 W / 3,000 MHz • Difused Ballast Resistor • Omnigold™ Metalization System DIM A L G H J F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 60 mA 30 V 10 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 17 °C/W B C D E F G H I J K L M N P .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.