Advanced Semiconductor MSC80183
MSC80183 is a Silicon NPN Microwave Transistor Supplied in a Common Base Package, Designed for Amplifier/Oscillator Applications up to 2.3 GHz.DESCRIPTION
: The ASI PACKAGE 230 2L FLGFEATURES
:●
● Hermetically Sealed Package Gold Metallization
MAXIMUM RATINGS
IC VCC VEB 1.2 A 26 V 3.5 V 21.4 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 7.0 C/W O O O O O O PDISS TJ TSTG θJC 1 = Collector 2 = Emitter 3 = Base TRANS1.SYM CHARACTERISTICS SYMBOL BVCER BVCBO BVEBO ICBO hFE COB Pout PG ηC VCC = 22 V IC = 5.0 mA IC = 1.0 mA IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V TC = 25 C O TEST CONDITIONS RBE = 10Ω MINIMUM 44 44 3.5 TYPICAL MAXIMUM UNITS V V V 0.5 IC = 500 mA f = 1.0 MHz 7.0 PIN = 0.76 W f = 2.3 GHz 9.6 40 8.0 10.2 45 30 300 8.5 mA pF W Db % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1202
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 MSC85623 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1202
● TELEX: 18-2651
● FAX (818) 765-3004