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MV1807J1
SILICON VARACTOR DIODE
DESCRIPTION:
The ASI MV1807J1 is a Diffused Epitaxial Varactor Diode Designed for Multiplier Applications.
PACKAGE STYLE DO-4
MAXIMUM RATINGS
I V PDISS TJ TSTG θJC
O O
100 mA 80 V 21 W @ TC = 25 C -65 C to +150 C -65 C to +175 C 6.0 C/W
O O O O
Cathode to case
CHARACTERISTICS
SYMBOL
VB CT RS FOUT POUT FIN PIN IR = 10 µA VR = 6.0 V VR = 6.0 V
TC = 25 C
O
NONE
TEST CONDITIONS
f = 1.0 MHz f = 50 MHz
MINIMUM
80 10.8
TYPICAL
MAXIMUM
13.2
UNITS
V pF Ohms MHz W MHz W
0.25 1000 25.1 500 37.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1202 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
MV1807J1 Datasheet
