PT9701
PT9701 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a mon Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225
- 400 MHz Military munications Band.
PACKAGE STYLE .280 4L STUD
Features
INCLUDE:
- Gold Metalization
- Emitter Ballasting
- High Gain
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO h FE Cob PG ηC IC = 20 m A IC = 10 m A IE = 1.0 m A VCE = 5.0 V VCB = 28 V VCE = 28 V
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25 45 3.5
UNITS
V V V ---
IC = 200 m A f = 1.0 MHz Pout = 5.0 W f = 400 MHz
15 7.0 10 50 12 55 p F d B %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without...
