The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
PT9701
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band.
PACKAGE STYLE .280 4L STUD
FEATURES INCLUDE:
• Gold Metalization • Emitter Ballasting • High Gain
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 1.25 A 45 V 14 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +200 °C 12 °C/W
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO hFE Cob PG ηC IC = 20 mA IC = 10 mA IE = 1.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V
TC = 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25 45 3.5
UNITS
V V V ---
IC = 200 mA f = 1.0 MHz Pout = 5.0 W f = 400 MHz
15 7.0 10 50 12 55
pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
PT9701 Datasheet
