SD1222-5
SD1222-5 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations.
PACKAGE STYLE .380 4L FLG
B .112 x 45°
FEATURES
:
- PG = 8.2 d B min. at 5 W/30 MHz
- IMD3 = -30 d Bc max. at 20 W (PEP)
- Omnigold™ Metalization System
- Emitter Ballasting
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 5.83 °C/W
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO ICES h FE Cob GP
TC = 25 °C
IC = 200 m A IE = 10 m A VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V
IC = 200 m A w w
NONETEST CONDITIONS w
.D t a
S a e h t e
A B C D E F G H I J
U 4
D MINIMUM inches / mm
.c
C m o
A J .125 G H I MAXIMUM inches / mm
Ø.125 NOM. FULL R
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11
.240 / 6.10
.255 / 6.48
MINIMUM TYPICAL...