• Part: SD1222-5
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 45.65 KB
Download SD1222-5 Datasheet PDF
Advanced Semiconductor
SD1222-5
SD1222-5 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION : The ASI SD1222-5 is a transistor designed primarily for 12.5 V AM Class-C amplifiers in the118-136 MHz band and 28 V Class-C RF amplifiers in ground stations. PACKAGE STYLE .380 4L FLG B .112 x 45° FEATURES : - PG = 8.2 d B min. at 5 W/30 MHz - IMD3 = -30 d Bc max. at 20 W (PEP) - Omnigold™ Metalization System - Emitter Ballasting MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 3.0 A 65 V 35 V 4.0 V 30 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 5.83 °C/W CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICES h FE Cob GP TC = 25 °C IC = 200 m A IE = 10 m A VCB = 30 V VCE = 30 V VCE = 5.0 V VCB = 30 V VCC = 27 V IC = 200 m A w w NONETEST CONDITIONS w .D t a S a e h t e A B C D E F G H I J U 4 D MINIMUM inches / mm .c C m o A J .125 G H I MAXIMUM inches / mm Ø.125 NOM. FULL R .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .240 / 6.10 .255 / 6.48 MINIMUM TYPICAL...