SD1526-08 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

Base Device Designed for IFF, DME, and Tacan Pulse Applications.

SD1526-08 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	SD1526-08
Manufacturer	Advanced Semiconductor
File Size	82.89 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	SD1526-08 Datasheet

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( DataSheet : www.DataSheet4U.com ) SD1526-08 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1526-08 is a Common Base Device Designed for IFF, DME, and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Low Thermal Resistance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 1.0 A 45 V 21.9 W @ TC = 25 °C -55 °C to +200 °C -55 °C to +150 °C 8.0 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCBO BVCEO BVCES BVEBO ICES hFE PG TC = 25 °C TEST CONDITIONS IC = 1.0 mA IC = 5.0 mA IC = 5.0 mA IE = 1.0 mA VCE = 28 V VCE = 5.0 V VCE = 28 V PULSE WIDTH MINIMUM TYPICAL MAXIMUM 45 45 45 3.5 1.0 UNITS V V V V mA --dB IC = 100 mA Pout = 5.0 W =10 µS f = 1025 to 1150 MHz =1.0% 10 9.