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SD1530-7 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications.

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Datasheet Details

Part number SD1530-7
Manufacturer Advanced Semiconductor
File Size 19.30 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet SD1530-7 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 2.5 A 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.4 C/W O 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CES BV EBO hFE PG ηC IC = 75 mA IE = 25 mA VCE = 5.0 V VCC = 50 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 4.0 UNITS V V --- IC = 300 mA Pout = 25 W fo = 960 to 1215 MHz DUTY CYCLE = 1.0% 10 8.5 10 45 PULSE WIDTH = 10 µS dB % A D V A N C E D S E M I C O N D U C T O R, I N C.