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TP2314
NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39 (CE) DESCRIPTION:
The TP2314 is a High Frequency Transistor Designed for Large Signal Power Amplifier Applications, With Emitter Grounded to Case.
MAXIMUM RATINGS
I V PDISS TJ T STG θ JC 1.0 A 18 V 8.0 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +200 OC 22 C/W
O
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1 = COLLECTOR 2 = BASE 3 = EMITTER
CHARACTERISTICS
SYMBOL
BV CEO BV CES BV CBO ICBO BV EBO hFE Cob GPE η IC = 10 mA IC = 5.0 mA IC = 5.0 mA VCB = 15 V IE = 1.0 mA VCE = 5.0 V VCB = 15 V
TC = 25 OC
TEST CONDITIONS
MINIMUM
18 36 36
TYPICAL
MAXIMUM
UNITS
V V V µA V ---
250 4.0 IC = 250 mA f = 1.0 MHz Pout = 40 W f = 175 MHz 5.0 20 0.1 50
pF W %
VCC = 12.5 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
TP2314 Datasheet
