Datasheet Summary
NPN SILICON RF-MICROWAVE POWER TRANSISTOR
DESCRIPTION:
The ASI TPR175 is a mon base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz.
PACKAGE STYLE
Features
:
- mon Base
- Internal Matching Network
- PG = 8.0 dB at 175 W/1090 MHz
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCES VEBO PDISS TJ TSTG θJC 12.5 A 55 V 3.5 V 388 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.45 °C/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BVCES BVEBO hFE PG VSRW ηC IC = 20 mA
TC = 25 °C NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
55 3.5
UNITS
V V ---
IE = 5.0 mA VCE = 5.0 V VCE = 50 V IC = 20 mA POUT = 175 W f = 1090 MHz
10 8.0 9.0...