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TPR175 - NPN SILICON RF-MICROWAVE POWER TRANSISTOR

General Description

The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz.

Key Features

  • Common Base.
  • Internal Matching Network.
  • PG = 8.0 dB at 175 W/1090 MHz.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number TPR175
Manufacturer Advanced Semiconductor
File Size 23.14 KB
Description NPN SILICON RF-MICROWAVE POWER TRANSISTOR
Datasheet download datasheet TPR175 Datasheet

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Full PDF Text Transcription (Reference)

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TPR175 NPN SILICON RF-MICROWAVE POWER TRANSISTOR DESCRIPTION: The ASI TPR175 is a common base transistor Designed for pulsed systems in the frequency band 1030-1090 MHz. PACKAGE STYLE FEATURES: • Common Base • Internal Matching Network • PG = 8.0 dB at 175 W/1090 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC VCES VEBO PDISS TJ TSTG θJC 12.5 A 55 V 3.5 V 388 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 0.45 °C/W 1 = Collector 2 = Base 3 = Emitter CHARACTERISTICS SYMBOL BVCES BVEBO hFE PG VSRW ηC IC = 20 mA TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 3.5 UNITS V V --- IE = 5.0 mA VCE = 5.0 V VCE = 50 V IC = 20 mA POUT = 175 W f = 1090 MHz 10 8.0 9.0 00:1 40 dB % A D V A N C E D S E M I C O N D U C T O R, I N C.