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ASI TPV3100
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI TPV3100 is a Class AB Common Device Designed for Television Band IV & V Applications.
FEATURES INCLUDE:
• Gold Metalization • Emitter Ballasting Internal Matching •
PACKAGE STYLE .450 BAL FLG.(A)
MAXIMUM RATINGS
IC VCC PDISS TJ T STG θ JC 12 A 65 V 215 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 0.80 OC/W
1 = Collector 2 = Base 3 = Emitter
CHARACTERISTICS
SYMBOL
BV CBO BV CER BV EBO ICER hFE P1dB Pg IC = 20 mA IC = 10 mA IE = 10 mA VCE = 28 V VCE = 10 V VCE = 28 V VCE = 28 V
TC = 25 OC
TEST CONDITIONS
RBE = 75 Ω RBE = 75 Ω IC = 2.0 A ICQ =2X50 mA ICQ =2X50 mA Fo = 860 MHz Fo = 860 MHz
MINIMUM TYPICAL MAXIMUM
65 30 4.0 10 30 100 8.5 9.5 120
UNITS
V V V mA --W dB
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TPV3100 Datasheet
