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TPV596 - SILICON N-CHANNEL RF POWER MOSFET

General Description

The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz.

Key Features

  • PG = 12 dB min. at 0.5 W/ 860 MHz.
  • Common Emitter.
  • Omnigold™ Metallization System.

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Datasheet Details

Part number TPV596
Manufacturer Advanced Semiconductor
File Size 18.59 KB
Description SILICON N-CHANNEL RF POWER MOSFET
Datasheet download datasheet TPV596 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV596 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. PACKAGE STYLE 280 4L STUD FEATURES: • PG = 12 dB min. at 0.5 W/ 860 MHz • Common Emitter • Omnigold™ Metallization System MAXIMUM RATINGS IC VCE TJ TSTG PDISS 0.7 A 24 V -65 °C to +200 °C -65 °C to +150 °C 8.75 W @ TC = 25 C NONE O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVCER BVEBO ICBO hFE COB PG IC = 20 mA TC = 25 C O TEST CONDITIONS IC = 1.0 mA IC = 20 mA IE = 0.25 mA VCB = 28 V IC = 100 mA VCB = 28 V VCE = 20 V IE = 0.22 A VCE = 5.0 V f = 1.0 MHz f = 860 MHz RBE = 10 Ω MINIMUM 24 45 50 3.5 TYPICAL MAXIMUM UNITS V V V V 0.45 15 120 5.0 11.