TVV100 Datasheet PDF | Advanced Semiconductor

Advanced Semiconductor TVV100

TVV100 is Designed for PACKAGE STYLE .400 8L FLG C D B A FULL R G FEATURES: • Input Matching Network • • Omnigold™ Metalization System F E .1925 .125 K H O 4 x .060 R I J N L M MAXIMUM RATINGS DIM MINIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 16 A 65 V 33 V 3.5 V 150 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.8 OC/W O O A B C D E F G H I J K L M N O .395 / 10.03 .380 / 9.65 .735 / 18.67 .645 / 16.38 .895 / 22.73 .420 / 10.67 .003 / 0.08 .120 / 3.05 .159 / 4.04 .065 / 1.65 .115 / 2.92 .030 / 0.76 .125 / 3.18 .360 / 9.14 .075 / 1.91 .130 / 3.30 .390 /...

Part No.	TVV100
Datasheet	TVV100 Download
Manufacturer	Advanced Semiconductor
Description	NPN SILICON RF POWER TRANSISTOR
Buy	Stock & Price

DESCRIPTION

: The ASI TVV100 is Designed for PACKAGE STYLE .400 8L FLG C D B A FULL R G

FEATURES

:
● Input Matching Network
●
● Omnigold™ Metalization System F E .1925 .125 K H O 4 x .060 R I J N L M

MAXIMUM RATINGS

DIM MINIMUM inches / mm MAXIMUM inches / mm IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 16 A 65 V 33 V 3.5 V 150 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.8 OC/W O O A B C D E F G H I J K L M N O .395 / 10.03 .380 / 9.65 .735 / 18.67 .645 / 16.38 .895 / 22.73 .420 / 10.67 .003 / 0.08 .120 / 3.05 .159 / 4.04 .065 / 1.65 .115 / 2.92 .030 / 0.76 .125 / 3.18 .360 / 9.14 .075 / 1.91 .130 / 3.30 .390 / 9.91 .765 / 19.43 .655 / 16.64 .905 / 22.99 .430 / 10.92 .007 / 0.18 .130 / 3.30 .175 / 4.45 .280 / 7.11 .405 / 10.29 ORDER CODE: ASI10662 CHARACTERISTICS SYMBOL BVCBO BVCER BVCEO BVEBO hFE COB PG IC = 50 mA IC = 50 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS RBE = 15 Ω MINIMUM TYPICAL MAXIMUM 65 60 33 3.5 UNITS V V V V IE = 5.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 100 W IC = 2 X 100 mA IC = 500 mA f = 1.0 MHz f = 225 MHz 20 --11 60 150 --- --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C.