Datasheet4U Logo Datasheet4U.com

UFT30-28S - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

The ASI UFT30-28S is Designed for .112x45° A B

Features

  • www. DataSheet4U. com.
  • Omnigold™ Metalization System D ØC H I J #8-32 UNC-2A G F E.

📥 Download Datasheet

Datasheet preview – UFT30-28S

Datasheet Details

Part number UFT30-28S
Manufacturer Advanced Semiconductor
File Size 44.68 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet UFT30-28S Datasheet
Additional preview pages of the UFT30-28S datasheet.

📁 Similar Datasheet

  • UFT30 - (UFT30 - UFT32) ULTRA FAST RECOVERY RECTIFIERS (Microsemi Corporation)
  • UFT31 - (UFT30 - UFT32) ULTRA FAST RECOVERY RECTIFIERS (Microsemi Corporation)
  • UFT32 - (UFT30 - UFT32) ULTRA FAST RECOVERY RECTIFIERS (Microsemi Corporation)
  • UFT10005 - Silicon Super Fast Recovery Diode (GeneSiC)
  • UFT10005 - 100 Amp Supre Fast Recovery Rectifier (MCC)
  • UFT10010 - Silicon Super Fast Recovery Diode (GeneSiC)
  • UFT10010 - ULTRA FAST RECOVERY MODULES (Microsemi)
  • UFT10010 - 100 Amp Supre Fast Recovery Rectifier (MCC)
  • UFT10015 - ULTRA FAST RECOVERY MODULES (Microsemi)
  • UFT10020 - Silicon Super Fast Recovery Diode (GeneSiC)
Other Datasheets by Advanced Semiconductor
  • UFT30-28 - NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
UFT30-28S NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .380 4L STUD DESCRIPTION: The ASI UFT30-28S is Designed for .112x45° A B FEATURES: www.DataSheet4U.com • • • Omnigold™ Metalization System D ØC H I J #8-32 UNC-2A G F E MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θ JC 10 A 60 V 35 V 140 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.5 OC/W DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94 .230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.
Published: |