UHBS30-2
UHBS30-2 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI UHBS30-2 is Designed for
PACKAGE STYLE .230 6L FLG
A .040x45° 4X .025 R .115 .430 D E .125 G H F C B 2XØ.130
Features
:
- -
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VCES VEBO PDISS TJ TSTG θ JC
9.0 A 50 V 30 V 50 V 4.0 V 100 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 OC/W
DIM A B C D E F G H I J K L MINIMUM inches / mm
MAXIMUM inches / mm
.355 / 9.02 .115 / 2.92 .075 / 1.91 .225 / 5.72 .090 / 2.29 .720 / 18.29 .970 / 24.64 .355 / 9.02 .004 / 0.10 .120 / 3.05 .160 / 4.06 .230 / 5.84
.365 / 9.27 .125 / 3.18 .085 / 2.16 .235 / 5.97 .110 / 2.79 .730 / 18.54 .980 / 24.89 .365 /...
