ULBM05 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI ULBM0.5 is Designed for PACKAGE STYLE .205 4L PILL D

Key Features

Omnigold™ Metalization System B A C.

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ULBM05 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	ULBM05
Manufacturer	Advanced Semiconductor
File Size	15.52 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	ULBM05 Datasheet

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ULBM0.5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM0.5 is Designed for PACKAGE STYLE .205 4L PILL D FEATURES: • • • Omnigold™ Metalization System B A C MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 0.4 A 28 V 12 V 4.0 V 2.5 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 70 OC/W O O O DIM A B C D E F G H .106 / 2.700 .039 / 1.000 .004 / 0.100 .200 / 5.100 MINIMUM inches / mm F G H E MAXIMUM inches / mm .976 / 24.800 .976 / 24.800 .028 / 0.700 .138 / 3.500 1.00 / 25.400 1.00 / 25.400 .031 / 0.800 .139 / 3.400 .047 / 1.200 .006 / 0.150 .208 / 5.300 ORDER CODE: ASI10674 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO hFE Cob PG IC = 25 mA IC = 10 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 12 28 4.0 UNITS V V V IE = 5.0 mA VCE = 5.0 V VCB = 12.