Advanced Semiconductor ULBM2SL
ULBM2SL is Designed for PACKAGE STYLE .280 4L PILL A FEATURES: • • • Omnigold™ Metalization System ØB MAXIMUM RATINGS ØC IC VCBO VCER VCES VEBO PDISS TJ TSTG θ JC 0.75 A 36 V 16 V 36 V 4.0 V 5.0 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 35.0 OC/W O DIM A B C D E F .275 / 6.99 .004 / 0.10 .050 / 1.27 .118 / 3.00 MINIMUM inches / mm D E F MAXIMUM inches / mm .220 / 5.59 .230 / 5.84 1.055 / 26.80 .285 / 7.24 .006 / 0.15 .060 .| Part No. | ULBM2SL |
|---|---|
| Datasheet | ULBM2SL Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI 1.52 .130 / 3.30 ORDER CODE: ASI10678 CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO ICER hFE Cob PG ηC IC = 5 mA IE = 1 mA VCB = 15 V VCE = 10 V IC = 25 mA TC = 25 C O NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 16 36 4.0 1.0 UNITS V V V mA mA --pF dB RBE = 80 Ω IC = 100 mA f = 1.0 MHz POUT = 2.0 W f = 470 MHz 11.5 60 40 0.5 200 10 VCE = 5.0 V VCB = 7.5 V VCC = 12.5 V % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1