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VFT300-28 - VHF POWER MOSFET Silicon N-Channel Enhancement Mode

Datasheet Summary

Description

The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz.

Features

  • PG = 14 dB Typical at 175 MHz.
  • η D = 55% Typ. at POUT = 300 Watts.
  • Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K.

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Datasheet Details

Part number VFT300-28
Manufacturer Advanced Semiconductor
File Size 24.55 KB
Description VHF POWER MOSFET Silicon N-Channel Enhancement Mode
Datasheet download datasheet VFT300-28 Datasheet
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Full PDF Text Transcription

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VFT300-28 VHF POWER MOSFET Silicon N-Channel Enhancement Mode DESCRIPTION: The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz. PACKAGE STYLE .400 BAL FLG (D) A .080x45° B FULL R FEATURES: • PG = 14 dB Typical at 175 MHz • η D = 55% Typ. at POUT = 300 Watts • Omnigold™ Metalization System E .1925 D C D D (4X).060 R M G H I F G N G Sources are connected to flange L J K MAXIMUM RATINGS ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC O 16 A 65 V 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.6 OC/W TC = 25 OC O O DIM A B C D E F G H I J K L M N MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .
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