VFT300-28
VFT300-28 is VHF POWER MOSFET Silicon N-Channel Enhancement Mode manufactured by Advanced Semiconductor.
VHF POWER MOSFET
Silicon N-Channel Enhancement Mode
DESCRIPTION:
The VFT300-28 is Designed for Wideband High Power VHF Amplifier Applications operating up to 250 MHz.
PACKAGE STYLE .400 BAL FLG (D)
A .080x45° B FULL R
Features
:
- PG = 14 d B Typical at 175 MHz
- η D = 55% Typ. at POUT = 300 Watts
- Omnigold™ Metalization System
E .1925 D C
(4X).060 R
Sources are connected to flange
MAXIMUM RATINGS
ID V(BR)DSS VDGR VGS PDISS TJ T STG θ JC
16 A 65 V 65 V ± 40 V 300 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 0.6 OC/W
TC = 25 OC
DIM A B C D E F G H I J K L M N
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .210 / 5.33 .125 / 3.18 .380 / 9.65 .580 / 14.73 .435 / 11.05 1.090 / 27.69 1.335 / 33.91 .003 / 0.08 .060 / 1.52 .100 / 2.54 .395 / 10.03 .850 / 21.59
.230 / 5.84
.390 / 9.91 .620 / 15.75
1.105 / 28.07 1.345 / 34.16 .007 / 0.18 .070 / 1.78 .115 / 2.92 .230 / 5.84 .407 / 10.34 .870 / 22.10
ORDER CODE: ASI10707
MINIMUM TYPICAL MAXIMUM
65 5.0 1.0 1.0 5.0 1.5 3500 375 188 26 12 50 14 55
CHARACTERISTICS
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