VHB25-12F
VHB25-12F is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-12F is Designed for
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
Features
:
- -
- Omnigold™ Metalization System
C D F E H I
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 C -65 OC to +200 OC -65 OC to +150 OC 3.5 OC/W
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10714
CHARACTERISTICS
SYMBOL
BVCEO BVCES...
