Datasheet4U.com

VLB10-12F Datasheet PDF

Advanced Semiconductor VLB10-12F

VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz.
Part No. VLB10-12F
Datasheet VLB10-12F Download
Manufacturer
Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Buy Stock & Price
VLB10-12F datasheet page 1 preview

DESCRIPTION

: The ASI

FEATURES

:
● Common Emitter
● PG = 16 dB at 10 W/50 MHz
● Omnigold™ Metalization System

MAXIMUM RATINGS

IC 2.0 A VCBO 36 V VCES 36 V VEBO 4.0 V PDISS 35 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A E C Ø.125 NOM. FULL R J .125 B E C D E F GH I DIM MINIMUM inches / mm A .220 / 5.59 B .785 / 19.94 C .720 / 18.29 D .970 / 24.64 E F .004 / 0.10 G .085 / 2.16 H .160 / 4.06 I J .240 / 6.10 MAXIMUM inches / mm .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 ORDER CODE: ASI10732 CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS BVCEO IC = 15 mA BVCES IC = 50 mA BVEBO IE = 2.5 mA ICBO VCB = 15 V hFE VCE = 5.0 V IC = 250 mA COB VCB = 15 V f = 1.0 MHz PG VCC = 12.5 V POUT = 10 W ηC f = 50 MHz MINIMUM TYPICAL MAXIMUM 18 36 4.0 5.0 5.0 200 65 16 60 UNITS V V V mA --- pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE
● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.