VLB10-12F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz.

Key Features

Common Emitter.
PG = 16 dB at 10 W/50 MHz.
Omnigold™ Metalization System.

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VLB10-12F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VLB10-12F
Manufacturer	Advanced Semiconductor
File Size	14.22 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VLB10-12F Datasheet

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VLB10-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB10-12F is Designed for 12.5 V, Large Signal Class C Amplifier Applications up to 50 MHz. FEATURES: • Common Emitter • PG = 16 dB at 10 W/50 MHz • Omnigold™ Metalization System MAXIMUM RATINGS IC 2.0 A VCBO 36 V VCES 36 V VEBO 4.0 V PDISS 35 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 5.0 °C/W PACKAGE STYLE .380 4L FLG .112 x 45° B A E C Ø.125 NOM. FULL R J .125 B E C D E F GH I DIM MINIMUM inches / mm A .220 / 5.59 B .785 / 19.94 C .720 / 18.29 D .970 / 24.64 E F .004 / 0.10 G .085 / 2.16 H .160 / 4.06 I J .240 / 6.10 MAXIMUM inches / mm .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.