VLB100-12 - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

.112x45° A FULL R Ø.125 NOM.

Key Features

Omnigold™ Metalization System C B E D G.

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VLB100-12 npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VLB100-12
Manufacturer	Advanced Semiconductor
File Size	18.11 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VLB100-12 Datasheet

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VLB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB100-12 is Designed for PACKAGE STYLE .500 4L FLG .112x45° A FULL R Ø.125 NOM. L FEATURES: • • • Omnigold™ Metalization System C B E D G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC 20 A 36 V 18 V 4.0 V 270 W @ TC = 25 OC -65 OC to +200 OC -65 C to +150 C 0.65 OC/W O O DIM A B C D E F G H I J K L F K H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .125 / 3.18 .245 / 6.22 .720 / 18.28 .125 / 3.18 .970 / 24.64 .495 / 12.57 .003 / 0.08 .090 / 2.29 .150 / 3.81 .230 / 5.84 .255 / 6.48 .7.30 / 18.54 .980 / 24.89 .505 / 12.83 .007 / 0.18 .110 / 2.79 .175 / 4.45 .280 / 7.11 .980 / 24.89 1.050 / 26.