VLB70-12F - NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

General Description

B .112 x 45° A Ø.125 NOM.

Key Features

Omnigold™ Metalization System C D F E I GH.

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VLB70-12F npn silicon rf power transistor by Advanced Semiconductor - Datasheet Preview

Datasheet Details

Part number	VLB70-12F
Manufacturer	Advanced Semiconductor
File Size	17.81 KB
Description	NPN SILICON RF POWER TRANSISTOR
Datasheet	VLB70-12F Datasheet

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Full PDF Text Transcription (Reference)

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VLB70-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VLB70-12F is Designed for PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • • • Omnigold™ Metalization System C D F E I GH MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O 12 A 36 V 18 V 3.5 V 183 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 1.05 OC/W O O DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.