Datasheet4U Logo Datasheet4U.com

vhb2512f - NPN SILICON RF POWER TRANSISTOR

Description

The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz.

B .112 x 45° A Ø.125 NOM.

Features

  • Common Emitter.
  • PG = 10 dB at 25 W/175 MHz.
  • Omnigold™ Metalization System E B C D F E C E.

📥 Download Datasheet

Datasheet preview – vhb2512f

Datasheet Details

Part number vhb2512f
Manufacturer Advanced Semiconductor
File Size 14.64 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet vhb2512f Datasheet
Additional preview pages of the vhb2512f datasheet.

📁 Similar Datasheet

Other Datasheets by Advanced Semiconductor
  • VHB25-12F - NPN SILICON RF POWER TRANSISTOR
  • VHB25-12F - NPN SILICON RF POWER TRANSISTOR
  • VHB25-12S - NPN SILICON RF POWER TRANSISTOR
  • VHB25-28F - NPN SILICON RF POWER TRANSISTOR
  • VHB25-28S - NPN SILICON RF POWER TRANSISTOR
  • VHB1-12T - NPN SILICON RF POWER TRANSISTOR
  • VHB1-28T - NPN SILICON RF POWER TRANSISTOR
  • VHB10-12F - NPN SILICON RF POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
VHB25-12F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B .112 x 45° A Ø.125 NOM. FULL R J .125 FEATURES: • Common Emitter • PG = 10 dB at 25 W/175 MHz • Omnigold™ Metalization System E B C D F E C E MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W DIM A B C D E F G H I J I GH MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.
Published: |