vhb2512f
vhb2512f is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
VHB25-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB25-12F is Designed for Class C, 12.5 V High Band Applications up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B .112 x 45° A Ø.125 NOM. FULL R J .125
Features
:
- mon Emitter
- PG = 10 dB at 25 W/175 MHz
- Omnigold™ Metalization System
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 4.0 A 36 V 18 V 4.0 V 65 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 3.5 °C/W
DIM A B C D E F G H I J
I GH
MINIMUM inches / mm
MAXIMUM inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 /...
