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NE21935 - NPN SILICON HI FREQUNCY TRANSISTOR

General Description

The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz.

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Datasheet Details

Part number NE21935
Manufacturer Advanced
File Size 35.71 KB
Description NPN SILICON HI FREQUNCY TRANSISTOR
Datasheet download datasheet NE21935 Datasheet

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NE21935 NPN SILICON HI FREQUNCY TRANSISTOR DESCRIPTION: The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB fT |S21E| TC = 25 °C TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 20 mA IC = 20 mA f = 1.0 GHz f = 2.0 GHz IC = 20 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 0.4 8.0 15.5 8.0 9.0 300 1.