NE21935
NE21935 is NPN SILICON HI FREQUNCY TRANSISTOR manufactured by Advanced.
NPN SILICON HI FREQUNCY TRANSISTOR
DESCRIPTION:
The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz.
PACKAGE STYLE .100 4L PILL
Features
INCLUDE:
- High frequency 8.0 GH
- Low noise, 1 d B at 0.5 GHz.
MAXIMUM RATINGS:
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 m A 20 V 10 V 1.5 V 580 m W @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W
1 = BASE 3 = COLLECTOR 2& 4 = EMITTER
CHARACTERISTICS
SYMBOL
ICBO IEBO h FE CCB f T |S21E|
TC = 25 °C
TEST CONDITIONS
VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 20 m A IC = 20 m A f = 1.0 GHz f = 2.0 GHz IC = 20 m A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
1.0 1.0 30 100 0.4 8.0 15.5 8.0 9.0 300 1.0
UNITS
µA µA --p F GHz d B
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
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