Advanced NE21935
NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz.| Part No. | NE21935 |
|---|---|
| Datasheet | NE21935 Download |
| Manufacturer |  Advanced |
| Description | NPN SILICON HI FREQUNCY TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: The ASI PACKAGE STYLE .100 4L PILLFEATURES
INCLUDE:● High frequency 8.0 GH
● Low noise, 1 dB at 0.5 GHz.
MAXIMUM RATINGS
: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB fT |S21E| TC = 25 °C TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 20 mA IC = 20 mA f = 1.0 GHz f = 2.0 GHz IC = 20 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 0.4 8.0 15.5 8.0 9.0 300 1.0 UNITS µA µA --pF GHz dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1