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NE64535
NPN SILICON LOW NOISE RF TRANSISTOR
DESCRIPTION:
The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz.
PACKAGE STYLE .085 4L SQ
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz • S21E2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package
MAXIMUM RATINGS:
IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C
O
-65 °C to +200 °C -65 °C to +150 °C 85 °C/W
TC = 25 °C
1 = Collector
2 & 4 = Emitter
3 = Base
ORDER CODE: ASI10752
CHARACTERISTICS
SYMBOL
ICBO IEBO hFE CCB ft S21E NF GA
2
TEST CONDITIONS
VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA
MINIMUM TYPICAL MAXIMUM
100 1.
NE64535 Datasheet
