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8Q1024K8SRAM - high-performance 1M byte (8Mbit) CMOS static RAM

Key Features

  • ‰ 25ns maximum (3.3 volt supply) address access time ‰ Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Typical radiation performance - Total dose: 50krad(Si) - SEL Immune >80 MeV-cm2/mg - LETTH(0.25) = >10 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 5.0E-9 -.

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Datasheet Details

Part number 8Q1024K8SRAM
Manufacturer Aeroflex Circuit Technology
File Size 238.87 KB
Description high-performance 1M byte (8Mbit) CMOS static RAM
Datasheet download datasheet 8Q1024K8SRAM Datasheet

Full PDF Text Transcription (Reference)

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Standard Products Data Sheet January, 2003 QCOTSTM UT8Q1024K8 SRAM FEATURES ‰ 25ns maximum (3.3 volt supply) address access time ‰ Dual cavity package contains two (2) 512K x 8 industrystandard asynchronous SRAMs; the control architecture allows operation as an 8-bit data width ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Typical radiation performance - Total dose: 50krad(Si) - SEL Immune >80 MeV-cm2/mg - LETTH(0.25) = >10 MeV-cm2/mg - Saturated Cross Section cm2 per bit, 5.0E-9 - <1E-8 errors/bit-day, Adams 90% geosynchronous heavy ion ‰ Packaging options: - 44-lead bottom brazed dual CFP (BBTFP) (4.