Datasheet4U Logo Datasheet4U.com

UT7C138 - (UT7C138 / UT7C139) 4Kx8/9 Radiation-Hardened Dual-Port Static RAM

General Description

The UT7C138/139 consists of an array of 4K words of 8 or 9 bits of dual-port SRAM cells, I/O and address lines, and control signals (CE, OE, R/W).

These control pins permit independent access for reads or writes to any location in memory.

Key Features

  • q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM www. DataSheet4U. com q CMOS compatible inputs, TTL/CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby current q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019 - Total-dose: 1.0E6 rads(Si) - Memory Cell LET threshold: 85 MeV-cm2 /mg q q - Latchup immune (LET >100 MeV-c.

📥 Download Datasheet

Datasheet Details

Part number UT7C138
Manufacturer Aeroflex Circuit Technology
File Size 314.55 KB
Description (UT7C138 / UT7C139) 4Kx8/9 Radiation-Hardened Dual-Port Static RAM
Datasheet download datasheet UT7C138 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Standard Products UT7C138/139 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Data Sheet January 2002 FEATURES q 45ns and 55ns maximum address access time q Asynchronous operation for compatibility with industrystandard 4K x 8/9 dual-port static RAM www.DataSheet4U.com q CMOS compatible inputs, TTL/CMOS compatible output levels q Three-state bidirectional data bus q Low operating and standby current q Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883 Method 1019 - Total-dose: 1.