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UT8Q512E - 512K x 8 RadTol SRAM

Datasheet Summary

Features

  • ‰ 20ns maximum (3.3 volt supply) address access time ‰ Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Operational environment: - Total dose: 50 krads(Si) - SEL Immune 110 MeV-cm2/mg - SEU LETTH(0.25) = 52 cm2 MeV - Saturated Cross Section 2.8E-8 cm2/bit -.

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Datasheet Details

Part number UT8Q512E
Manufacturer Aeroflex Circuit Technology
File Size 189.56 KB
Description 512K x 8 RadTol SRAM
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Standard Products UT8Q512E 512K x 8 RadTol SRAM Data Sheet November 11, 2008 FEATURES ‰ 20ns maximum (3.3 volt supply) address access time ‰ Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Operational environment: - Total dose: 50 krads(Si) - SEL Immune 110 MeV-cm2/mg - SEU LETTH(0.25) = 52 cm2 MeV - Saturated Cross Section 2.8E-8 cm2/bit -<1.1E-9 errors/bit-day, Adams 90% worst case environment geosynchronous orbit ‰ Packaging: - 36-lead ceramic flatpack (3.831 grams) ‰ Standard Microcircuit Drawing 5962-99607 - QML Q and V compliant part INTRODUCTION The UT8Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.
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