The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Standard Products
UT9Q512E 512K x 8 RadTol SRAM
Data Sheet September, 2008
FEATURES 20ns maximum (5 volt supply) address access time Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs TTL compatible inputs and output levels, three-state
bidirectional data bus Operational environment:
- Total dose: 50 krads(Si)
- SEL Immune 110 MeV-cm2/mg
- SEU LETTH(0.25) = 52 cm2 MeV - Saturated Cross Section 2.8E-8 cm2/bit
-<1.1E-9 errors/bit-day, Adams 90% worst case environment geosynchronous orbit
Packaging:
- 36-lead ceramic flatpack (3.831 grams) Standard Microcircuit Drawing 5962-00536
- QML Q and V compliant part
INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.