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UT9Q512E - 512K x 8 RadTol SRAM

Key Features

  • ‰ 20ns maximum (5 volt supply) address access time ‰ Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Operational environment: - Total dose: 50 krads(Si) - SEL Immune 110 MeV-cm2/mg - SEU LETTH(0.25) = 52 cm2 MeV - Saturated Cross Section 2.8E-8 cm2/bit -.

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Datasheet Details

Part number UT9Q512E
Manufacturer Aeroflex Circuit Technology
File Size 188.94 KB
Description 512K x 8 RadTol SRAM
Datasheet download datasheet UT9Q512E Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Standard Products UT9Q512E 512K x 8 RadTol SRAM Data Sheet September, 2008 FEATURES ‰ 20ns maximum (5 volt supply) address access time ‰ Asynchronous operation for compatibility with industry- standard 512K x 8 SRAMs ‰ TTL compatible inputs and output levels, three-state bidirectional data bus ‰ Operational environment: - Total dose: 50 krads(Si) - SEL Immune 110 MeV-cm2/mg - SEU LETTH(0.25) = 52 cm2 MeV - Saturated Cross Section 2.8E-8 cm2/bit -<1.1E-9 errors/bit-day, Adams 90% worst case environment geosynchronous orbit ‰ Packaging: - 36-lead ceramic flatpack (3.831 grams) ‰ Standard Microcircuit Drawing 5962-00536 - QML Q and V compliant part INTRODUCTION The UT9Q512E RadTol product is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.