Download the 1N4105 datasheet PDF.
This datasheet also covers the 1N4099 variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435.
Low Current Operation at 250 μA.
Low Reverse Leakage and Low Noise Characteristics.
Metallurgically Bonded.
Also available in DO-213 MELF style package
Maximum Ratings
Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW / °C above +50°C Forward Voltage @ 200mA: 1.1 volts maximum
Elect.
Full PDF Text Transcription for 1N4105 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
1N4105. For precise diagrams, and layout, please refer to the original PDF.
Silicon Zener Diode Series 1N4099 thru 1N4135, 1N4099-1 thru 1N4135-1 Features • 1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435 • L...
View more extracted text
5-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435 • Low Current Operation at 250 μA • Low Reverse Leakage and Low Noise Characteristics • Metallurgically Bonded • Also available in DO-213 MELF style package Maximum Ratings Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW / °C above +50°C Forward Voltage @ 200mA: 1.
1N4105 Datasheet
