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1N4133 - Silicon Zener Diode

Download the 1N4133 datasheet PDF. This datasheet also covers the 1N4099 variant, as both devices belong to the same silicon zener diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435.
  • Low Current Operation at 250 μA.
  • Low Reverse Leakage and Low Noise Characteristics.
  • Metallurgically Bonded.
  • Also available in DO-213 MELF style package Maximum Ratings Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW / °C above +50°C Forward Voltage @ 200mA: 1.1 volts maximum Elect.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4099-Aeroflex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N4133
Manufacturer Aeroflex
File Size 251.53 KB
Description Silicon Zener Diode
Datasheet download datasheet 1N4133 Datasheet

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Other Datasheets by Aeroflex

Part Number Description
1N4133-1 Low Noise Zener Diode
1N4133UR-1 Low Noise Zener Diode
1N4130 Silicon Zener Diode
1N4130-1 Low Noise Zener Diode
1N4130UR-1 Low Noise Zener Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Zener Diode Series 1N4099 thru 1N4135, 1N4099-1 thru 1N4135-1 Features • 1N4099-1 thru 1N4135-1 Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/435 • Low Current Operation at 250 μA • Low Reverse Leakage and Low Noise Characteristics • Metallurgically Bonded • Also available in DO-213 MELF style package Maximum Ratings Junction Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C DC Power Dissipation: 500 mW @ +50°C Power Derating: 4 mW / °C above +50°C Forward Voltage @ 200mA: 1.