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1N4150-1 - Silicon Switching Diodes

Download the 1N4150-1 datasheet PDF. This datasheet also covers the 1N4150 variant, as both devices belong to the same silicon switching diodes family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8” Surge Current A: 2A (pk) tp = 8.3 mS, VRM = 0 Surge Current B: 4A (pk) tp = 1 us, VRM = 0 Electrical Specifications @ +25 ºC (Unless Otherwise Specified) TYPE Number 1N.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4150-Aeroflex.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N4150-1
Manufacturer Aeroflex
File Size 158.44 KB
Description Silicon Switching Diodes
Datasheet download datasheet 1N4150-1 Datasheet

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Other Datasheets by Aeroflex

Part Number Description
1N4100 Silicon Zener Diode
1N4100-1 Low Noise Zener Diode
1N4100UR-1 Low Noise Zener Diode
1N4101 Silicon Zener Diode
1N4101-1 Low Noise Zener Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Switching Diodes 1N4150, 1N4150-1 & 1N3600 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 300 mA @ TA = +25°C Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8” Surge Current A: 2A (pk) tp = 8.3 mS, VRM = 0 Surge Current B: 4A (pk) tp = 1 us, VRM = 0 Electrical Specifications @ +25 ºC (Unless Otherwise Specified) TYPE Number 1N3600 1N4150, -1 VBR IR = 10 μA V dc 75 75 VRWM V (pk) 50 50 IR1 VR = 50 Vdc TA = 25 °C μA dc 0.1 0.1 IR2 VR = 50 Vdc TA =150°C μA dc 100 100 Forward Voltage Limits - All Types C IR = 0; f = 1 MHz ac signal = 50 mV (p-P) pF 2.5 2.