Description
The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability.
The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.
Features
- Output combs to 40+ GHz.
- Transition times down to 35 ps.
- Screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings (Chip and Beam Lead)
Parameters
Reverse Voltage Forward Current
Power Dissipation
Junction Temperature Storage Temperature Mounting / Bonding Temperature
Chip and Beam Lead
Model
MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11
VBR CJ
MIN
MIN
V pF
14 0.
MMD805-C12 Datasheet
