Datasheet4U Logo Datasheet4U.com

MMDB30-B11 - Silicon Step Recovery Diodes

Description

The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability.

The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming.

Features

  • Output combs to 40+ GHz.
  • Transition times down to 35 ps.
  • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting / Bonding Temperature Chip and Beam Lead Model MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11 VBR CJ MIN MIN V pF 14 0.

📥 Download Datasheet

Datasheet Details

Part number MMDB30-B11
Manufacturer Aeroflex
File Size 605.98 KB
Description Silicon Step Recovery Diodes
Datasheet download datasheet MMDB30-B11 Datasheet

📁 Similar Datasheet

  • MMDB30-B11 - Silicon Step Recovery Diodes (MA-COM)
  • MMDB35-B11 - Silicon Step Recovery Diodes (MA-COM)
  • MMDB45-B11 - Silicon Step Recovery Diodes (MA-COM)
  • MMD-04AB - Super low resistance (MAG LAYERS)
  • MMD-04BZ - Super low resistance (MAG LAYERS)
  • MMD-05BZ - Super low resistance (MAG LAYERS)
  • MMD-05CZ - Super low resistance (MAG LAYERS)
  • MMD-06AB - Super low resistance (MAG LAYERS)
  • MMD-06AE - Super low resistance (MAG LAYERS)
  • MMD-06AH - Super low resistance (MAG LAYERS)
Other Datasheets by Aeroflex

Full PDF Text Transcription

Click to expand full text
Silicon Step Recovery Diodes Description The diodes feature fully passivated, true mesa construction for sharp transitions and improved stability. The beam lead SRDs have the industry’s fastest transition times for millimeter wave multiplication and picosecond pulse forming. Features • Output combs to 40+ GHz • Transition times down to 35 ps • Screening per MIL-PRF-19500 and MIL-PRF-38534 available Absolute Maximum Ratings (Chip and Beam Lead) Parameters Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Mounting / Bonding Temperature Chip and Beam Lead Model MMDB30-B11 MMDB35-B11 MMDB45-B11 MMD805-C12 MMD810-C12 MMD820-C12 MMD830-C11 MMD832-C11 MMD835-C11 MMD837-C11 MMD840-C11 VBR CJ MIN MIN V pF 14 0.15 16 0.13 25 0.11 60 2.5 50 1.
Published: |