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MSS39,000 Series P-Type Silicon Schottky Diodes
Description
The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biased-detector applications up to 40 GHz.
Features
• Very low 1/f Noise • Detector applications to 40 GHz • Chip, beam lead or packaged devices
Absolute Maximum Ratings
Parameters Reverse Voltage Forward Current Operation Temperature Storage Temperature Power Dissipation Soldering Temperature (Packaged) Beam Lead Pull Strength, Min
Rating Rated VBR 50 mA -65 ºC to +150 ºC -65 ºC to +150 ºC 100 mW, derated linearly to zero at TA = +150 ºC + 230 ºC for 5 sec. 4 grams
Chip
Electrical Specifications, TA = 25 ºC
Model
VBR VF
CJ
MIN TYP MAX
V V pF
MSS39,045-C15
5.0
0.
MSS39 Datasheet
